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Modelling amorphous materials: application to alumina
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Recent research conducted by Andrew Morris’s team at Cambridge University has demonstrated the significance of employing ultra-high purity precursors in ALD to gather experimental data for solid-state modeling.
The Morris group utilized Epivalence’s Electronic grade trimethylaluminium, TMAl, [Al(CH3)3], for the ALD growth of aluminium oxide, representing a significant advancement in the development of modeling methods through the comparison of experimental and computationally derived results. The group aims to extend this approach to other layers grown by ALD using high purity precursors